Optically controlled silicene and germanene transistors driven by spin-bias

The transistor is the core unit of digital integrated circuits, and its performance integration are main determinants chip performance. With continuous progress nano-manufacturing technology process, high power heat consumption have become a major problem restricting development circuits. Using topological insulators instead traditional semiconductors, spin valley degrees freedom charge as information carriers, to design fabricate transistors, use optical interconnections replace metal between functional units, effective solutions thermal nano-integrated Based on two-dimensional insulators-silicene germanene, we theoretically propose kind optically controlled suitable for bias. effects off-resonant circularly polarized light output currents silicene germanene transistors calculated by using non-equilibrium Green's function method. It shown that properties (germanene) characteristics drain current chirality intensity incident light. Under coaction weak left bias, pure fully spin-up current. action strong field, phase transition edge state forms band gap, cut off, almost zero. Different from transistor, can obtain stable under 100% spin-down field. By simultaneously applying different central device region, be turned off effectively induced field energy mismatch caused local poles spin-dependent equal in ON state, however, breakdown voltage significantly higher than maintain operation at temperatures.